The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

K. Hamamoto; H. Ozaki; K. Nakatani; M. Yano; K. Suzuki; H. Okaniwa

doi:10.1016/0040-6090(89)90564-6

The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

K. Hamamoto, H. Ozaki, K. Nakatani, M. Yano, K. Suzuki, H. Okaniwa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH₄) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH₂ sites.

Original language	English
Pages (from-to)	161-170
Number of pages	10
Journal	Thin Solid Films
Volume	177
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(89)90564-6
Publication status	Published - Oct 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(89)90564-6

Cite this

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title = "The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition",

abstract = "An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH4) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH2 sites.",

author = "K. Hamamoto and H. Ozaki and K. Nakatani and M. Yano and K. Suzuki and H. Okaniwa",

note = "Funding Information: The authors wish to express their thanks to Mr. T. Satoh, Mr. S. Yamazaki and Mr. M. Hirasaka for their helpful discussions and to Mr. S. Sobajima, Director of the Advanced Film Products Laboratory of Teijin Ltd., for his encouragement and advice. This work was supported by NEDO (New Energy and Industrial Technology Development Organization) as a part of the Sunshine Project under the Ministry of International Trade and Industry.",

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doi = "10.1016/0040-6090(89)90564-6",

language = "English",

volume = "177",

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T1 - The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

AU - Hamamoto, K.

AU - Ozaki, H.

AU - Nakatani, K.

AU - Yano, M.

AU - Suzuki, K.

AU - Okaniwa, H.

N1 - Funding Information: The authors wish to express their thanks to Mr. T. Satoh, Mr. S. Yamazaki and Mr. M. Hirasaka for their helpful discussions and to Mr. S. Sobajima, Director of the Advanced Film Products Laboratory of Teijin Ltd., for his encouragement and advice. This work was supported by NEDO (New Energy and Industrial Technology Development Organization) as a part of the Sunshine Project under the Ministry of International Trade and Industry.

PY - 1989/10

Y1 - 1989/10

N2 - An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH4) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH2 sites.

AB - An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH4) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH2 sites.

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The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

Abstract

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