This paper aims to clarify the effect of parallel-connected varistor on unclamped inductive switching (UIS) robustness of SiC MOSFETs to improve the cut-off current capability of solid-state circuit breakers (SSCB). Because the operation of UIS tests is similar to that in the interruption of SSCB, UIS tests of SiC MOSFETs without varistor and with a parallel-connected varistor were implemented. It was found that the cut-off current of SiC MOSFETs with the varistor is much larger than that of SiC MOSFETs without varistor. The effect of varistor on increase of cut-off current depends on the MOS-gate type. The cut-off current is 3-5 times higher for planar-gate devices and 5-10 times higher for trench-gate devices compared with no varistor condition. To analyze mechanism of cut-off current increased by the varistor, the junction temperature in UIS tests with and without the varistor was estimated by simulation using experimental wave-forms. The simulation results show that the destruction mechanism of SiC MOSFETs is changed by varistor connection due to change of self-heating timing during the UIS.
|Number of pages||5|
|Publication status||Published - 2022|
|Event||12th International Conference on Integrated Power Electronics Systems, CIPS 2022 - Berlin, Germany|
Duration: Mar 15 2022 → Mar 17 2022
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Energy Engineering and Power Technology