The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

Sethavut Duangchan; Keisuke Yamamoto; Dong Wang; Hiroshi Nakashima; Akiyoshi Baba

doi:10.1109/EDTM47692.2020.9117986

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

Sethavut Duangchan, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Akiyoshi Baba

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.

Original language	English
Title of host publication	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728125381
DOIs	https://doi.org/10.1109/EDTM47692.2020.9117986
Publication status	Published - Apr 2020
Event	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia Duration: Apr 6 2020 → Apr 21 2020

Publication series

Name	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference	4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Country/Territory	Malaysia
City	Penang
Period	4/6/20 → 4/21/20

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM47692.2020.9117986

Cite this

Duangchan, S., Yamamoto, K., Wang, D., Nakashima, H., & Baba, A. (2020). The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings Article 9117986 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM47692.2020.9117986

The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate. / Duangchan, Sethavut; Yamamoto, Keisuke ; Wang, Dong et al.
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9117986 (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Duangchan, S, Yamamoto, K , Wang, D, Nakashima, H & Baba, A 2020, The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate. in 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings., 9117986, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020, Penang, Malaysia, 4/6/20. https://doi.org/10.1109/EDTM47692.2020.9117986

Duangchan S, Yamamoto K , Wang D, Nakashima H, Baba A. The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate. In 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9117986. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings). doi: 10.1109/EDTM47692.2020.9117986

Duangchan, Sethavut ; Yamamoto, Keisuke ; Wang, Dong et al. / The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate. 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

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abstract = "This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.",

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AB - This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.

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The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

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