TY - JOUR
T1 - Texture of bismuth telluride-based thermoelectric semiconductors processed by high-pressure torsion
AU - Ashida, Maki
AU - Hamachiyo, Takashi
AU - Hasezaki, Kazuhiro
AU - Matsunoshita, Hirotaka
AU - Kai, Masaaki
AU - Horita, Zenji
PY - 2009/7/1
Y1 - 2009/7/1
N2 - P-type Bi2Te3-based thermoelectric semiconductors were prepared, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition of Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high-pressure torsion (HPT). The crystal orientation was characterized by X-ray diffraction. The microstructures were characterized using optical microscopy and scanning electron microscopy (SEM). It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective in improving the thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.
AB - P-type Bi2Te3-based thermoelectric semiconductors were prepared, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition of Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high-pressure torsion (HPT). The crystal orientation was characterized by X-ray diffraction. The microstructures were characterized using optical microscopy and scanning electron microscopy (SEM). It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective in improving the thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.
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U2 - 10.1016/j.jpcs.2009.06.002
DO - 10.1016/j.jpcs.2009.06.002
M3 - Article
AN - SCOPUS:67651030018
SN - 0022-3697
VL - 70
SP - 1089
EP - 1092
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 7
ER -