Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

K. Kimura; D. Yamaguchi; K. Motohashi; K. Nakamura; Y. Unno; O. Jinnouchi; S. Altenheiner; A. Blue; M. Bomben; A. Butter; A. Cervelli; S. Crawley; A. Ducourthial; A. Gisen; M. Hagihara; K. Hanagaki; K. Hara; M. Hirose; Y. Homma; Y. Ikegami; S. Kamada; T. Kono; A. Macchiolo; G. Marchiori; F. Meloni; M. Milovanovic; A. Morton; G. Mullier; F. J. Munoz; C. Nellist; B. Paschen; A. Quadt; T. Rashid; J. Rieger; A. Rummler; K. Sato; K. Sato; N. Savic; H. Sawai; K. Sexton; M. E. Stramaglia; M. Swiatlowski; R. Takashima; Y. Takubo; S. Terzo; K. Todome; J. Tojo; K. Van Houten; J. Weingarten; S. Wonsak; K. Wraight; K. Yamamura

doi:10.1016/j.nima.2016.04.004

Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

K. Kimura, D. Yamaguchi, K. Motohashi, K. Nakamura, Y. Unno, O. Jinnouchi, S. Altenheiner, A. Blue, M. Bomben, A. Butter, A. Cervelli, S. Crawley, A. Ducourthial, A. Gisen, M. Hagihara, K. Hanagaki, K. Hara, M. Hirose, Y. Homma, Y. IkegamiS. Kamada, T. Kono, A. Macchiolo, G. Marchiori, F. Meloni, M. Milovanovic, A. Morton, G. Mullier, F. J. Munoz, C. Nellist, B. Paschen, A. Quadt, T. Rashid, J. Rieger, A. Rummler, K. Sato, K. Sato, N. Savic, H. Sawai, K. Sexton, M. E. Stramaglia, M. Swiatlowski, R. Takashima, Y. Takubo, S. Terzo, K. Todome, J. Tojo, K. Van Houten, J. Weingarten, S. Wonsak, K. Wraight, K. Yamamura

Experimental Particle Physics

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1 Citation (Scopus)

Abstract

Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).

Original language	English
Pages (from-to)	140-146
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	831
DOIs	https://doi.org/10.1016/j.nima.2016.04.004
Publication status	Published - Sept 21 2016

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2016.04.004

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Kimura, K., Yamaguchi, D., Motohashi, K., Nakamura, K., Unno, Y., Jinnouchi, O., Altenheiner, S., Blue, A., Bomben, M., Butter, A., Cervelli, A., Crawley, S., Ducourthial, A., Gisen, A., Hagihara, M., Hanagaki, K., Hara, K., Hirose, M., Homma, Y., ... Yamamura, K. (2016). Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 831, 140-146. https://doi.org/10.1016/j.nima.2016.04.004

Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment. / Kimura, K.; Yamaguchi, D.; Motohashi, K. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 831, 21.09.2016, p. 140-146.

Research output: Contribution to journal › Article › peer-review

Kimura, K, Yamaguchi, D, Motohashi, K, Nakamura, K, Unno, Y, Jinnouchi, O, Altenheiner, S, Blue, A, Bomben, M, Butter, A, Cervelli, A, Crawley, S, Ducourthial, A, Gisen, A, Hagihara, M, Hanagaki, K, Hara, K, Hirose, M, Homma, Y, Ikegami, Y, Kamada, S, Kono, T, Macchiolo, A, Marchiori, G, Meloni, F, Milovanovic, M, Morton, A, Mullier, G, Munoz, FJ, Nellist, C, Paschen, B, Quadt, A, Rashid, T, Rieger, J, Rummler, A, Sato, K, Sato, K, Savic, N, Sawai, H, Sexton, K, Stramaglia, ME, Swiatlowski, M, Takashima, R, Takubo, Y, Terzo, S, Todome, K, Tojo, J, Houten, KV, Weingarten, J, Wonsak, S, Wraight, K & Yamamura, K 2016, 'Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 831, pp. 140-146. https://doi.org/10.1016/j.nima.2016.04.004

Kimura K, Yamaguchi D, Motohashi K, Nakamura K, Unno Y, Jinnouchi O et al. Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2016 Sept 21;831:140-146. doi: 10.1016/j.nima.2016.04.004

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title = "Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment",

abstract = "Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).",

author = "K. Kimura and D. Yamaguchi and K. Motohashi and K. Nakamura and Y. Unno and O. Jinnouchi and S. Altenheiner and A. Blue and M. Bomben and A. Butter and A. Cervelli and S. Crawley and A. Ducourthial and A. Gisen and M. Hagihara and K. Hanagaki and K. Hara and M. Hirose and Y. Homma and Y. Ikegami and S. Kamada and T. Kono and A. Macchiolo and G. Marchiori and F. Meloni and M. Milovanovic and A. Morton and G. Mullier and Munoz, {F. J.} and C. Nellist and B. Paschen and A. Quadt and T. Rashid and J. Rieger and A. Rummler and K. Sato and K. Sato and N. Savic and H. Sawai and K. Sexton and Stramaglia, {M. E.} and M. Swiatlowski and R. Takashima and Y. Takubo and S. Terzo and K. Todome and J. Tojo and Houten, {K. Van} and J. Weingarten and S. Wonsak and K. Wraight and K. Yamamura",

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T1 - Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

AU - Kimura, K.

AU - Yamaguchi, D.

AU - Motohashi, K.

AU - Nakamura, K.

AU - Unno, Y.

AU - Jinnouchi, O.

AU - Altenheiner, S.

AU - Blue, A.

AU - Bomben, M.

AU - Butter, A.

AU - Cervelli, A.

AU - Crawley, S.

AU - Ducourthial, A.

AU - Gisen, A.

AU - Hagihara, M.

AU - Hanagaki, K.

AU - Hara, K.

AU - Hirose, M.

AU - Homma, Y.

AU - Ikegami, Y.

AU - Kamada, S.

AU - Kono, T.

AU - Macchiolo, A.

AU - Marchiori, G.

AU - Meloni, F.

AU - Milovanovic, M.

AU - Morton, A.

AU - Mullier, G.

AU - Munoz, F. J.

AU - Nellist, C.

AU - Paschen, B.

AU - Quadt, A.

AU - Rashid, T.

AU - Rieger, J.

AU - Rummler, A.

AU - Sato, K.

AU - Savic, N.

AU - Sawai, H.

AU - Sexton, K.

AU - Stramaglia, M. E.

AU - Swiatlowski, M.

AU - Takashima, R.

AU - Takubo, Y.

AU - Terzo, S.

AU - Todome, K.

AU - Tojo, J.

AU - Houten, K. Van

AU - Weingarten, J.

AU - Wonsak, S.

AU - Wraight, K.

AU - Yamamura, K.

PY - 2016/9/21

Y1 - 2016/9/21

N2 - Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).

AB - Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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ER -

Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

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