Tensile deformation of Si single crystals at high temperatures

Tubasa Suzuki; Masaki Tanaka; Tatsuya Morikawa; Yelm Okuyama; Jun Fujise; Toshiaki Ono

doi:10.4028/www.scientific.net/MSF.1016.1443

Tensile deformation of Si single crystals at high temperatures

Tubasa Suzuki, Masaki Tanaka, Tatsuya Morikawa, Yelm Okuyama, Jun Fujise, Toshiaki Ono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Czochralski silicon single crystals were deformed in tensile tests along the [134] direction at between 1173 K and 1373 K. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.

Original language	English
Title of host publication	THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications
Editors	Mihail Ionescu, Christof Sommitsch, Cecilia Poletti, Ernst Kozeschnik, Tara Chandra
Publisher	Trans Tech Publications Ltd
Pages	1443-1447
Number of pages	5
ISBN (Print)	9783035736304
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.1016.1443
Publication status	Published - 2021
Event	International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications, THERMEC 2021 - Vienna, Austria Duration: May 10 2021 → May 14 2021

Publication series

Name	Materials Science Forum
Volume	1016 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications, THERMEC 2021
Country/Territory	Austria
City	Vienna
Period	5/10/21 → 5/14/21

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.1016.1443

Cite this

Suzuki, T., Tanaka, M., Morikawa, T., Okuyama, Y., Fujise, J., & Ono, T. (2021). Tensile deformation of Si single crystals at high temperatures. In M. Ionescu, C. Sommitsch, C. Poletti, E. Kozeschnik, & T. Chandra (Eds.), THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (pp. 1443-1447). (Materials Science Forum; Vol. 1016 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.1016.1443

Tensile deformation of Si single crystals at high temperatures. / Suzuki, Tubasa; Tanaka, Masaki ; Morikawa, Tatsuya et al.
THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. ed. / Mihail Ionescu; Christof Sommitsch; Cecilia Poletti; Ernst Kozeschnik; Tara Chandra. Trans Tech Publications Ltd, 2021. p. 1443-1447 (Materials Science Forum; Vol. 1016 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, T, Tanaka, M , Morikawa, T, Okuyama, Y, Fujise, J & Ono, T 2021, Tensile deformation of Si single crystals at high temperatures. in M Ionescu, C Sommitsch, C Poletti, E Kozeschnik & T Chandra (eds), THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. Materials Science Forum, vol. 1016 MSF, Trans Tech Publications Ltd, pp. 1443-1447, International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications, THERMEC 2021, Vienna, Austria, 5/10/21. https://doi.org/10.4028/www.scientific.net/MSF.1016.1443

Suzuki T, Tanaka M , Morikawa T, Okuyama Y, Fujise J, Ono T. Tensile deformation of Si single crystals at high temperatures. In Ionescu M, Sommitsch C, Poletti C, Kozeschnik E, Chandra T, editors, THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. Trans Tech Publications Ltd. 2021. p. 1443-1447. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.1016.1443

Suzuki, Tubasa ; Tanaka, Masaki ; Morikawa, Tatsuya et al. / Tensile deformation of Si single crystals at high temperatures. THERMEC 2021 - International Conference on Processing and Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications. editor / Mihail Ionescu ; Christof Sommitsch ; Cecilia Poletti ; Ernst Kozeschnik ; Tara Chandra. Trans Tech Publications Ltd, 2021. pp. 1443-1447 (Materials Science Forum).

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abstract = "Czochralski silicon single crystals were deformed in tensile tests along the [134] direction at between 1173 K and 1373 K. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.",

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AU - Suzuki, Tubasa

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AU - Fujise, Jun

AU - Ono, Toshiaki

PY - 2021

Y1 - 2021

N2 - Czochralski silicon single crystals were deformed in tensile tests along the [134] direction at between 1173 K and 1373 K. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.

AB - Czochralski silicon single crystals were deformed in tensile tests along the [134] direction at between 1173 K and 1373 K. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.

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Tensile deformation of Si single crystals at high temperatures

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