TY - JOUR
T1 - Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface
AU - Nakajima, Akira
AU - Liu, Pucheng
AU - Ogura, Masahiko
AU - Makino, Toshiharu
AU - Nishizawa, Shin Ichi
AU - Yamasaki, Satoshi
AU - Ohashi, Hiromichi
AU - Kakushima, Kuniyuki
AU - Iwai, Hiroshi
PY - 2013/9
Y1 - 2013/9
N2 - The electrical properties at the GaN(0001)/AlGaN(0001) heterointerface have been investigated. Capacitance-voltage measurement and theoretical simulation results verify the existence of a two-dimensional (2D) hole gas, which is highly confined to the GaN/AlGaN interface with a peak carrier density of over 10 19 cm-3. Hall-effect measurements in the 80-460 K temperature range reveal that the 2D hole gas has zero activation energy and positive sheet-resistance temperature coefficients.
AB - The electrical properties at the GaN(0001)/AlGaN(0001) heterointerface have been investigated. Capacitance-voltage measurement and theoretical simulation results verify the existence of a two-dimensional (2D) hole gas, which is highly confined to the GaN/AlGaN interface with a peak carrier density of over 10 19 cm-3. Hall-effect measurements in the 80-460 K temperature range reveal that the 2D hole gas has zero activation energy and positive sheet-resistance temperature coefficients.
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U2 - 10.7567/APEX.6.091002
DO - 10.7567/APEX.6.091002
M3 - Article
AN - SCOPUS:84883701947
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 091002
ER -