Temperature-dependent interlayer coupling in Fe3Si/FeSi 2 artificial lattices

Ken Ichiro Sakai; Yuta Noda; Daiki Tsumagari; Hiroyuki Deguchi; Kaoru Takeda; Tsuyoshi Yoshitake

doi:10.1002/pssa.201330116

Temperature-dependent interlayer coupling in Fe₃Si/FeSi ₂ artificial lattices

Ken Ichiro Sakai, Yuta Noda, Daiki Tsumagari, Hiroyuki Deguchi, Kaoru Takeda, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Fe₃Si/FeSi₂ artificial lattices, wherein ferromagnetic (F)/antiferromagnetic (AF) interlayer coupling between the Fe ₃Si layers were induced by controlling the thickness of FeSi ₂ layers, were prepared on Si(111) substrates by facing targets direct-current sputtering. The interlayer couplings were investigated at different temperatures by measuring the magnetization curves. The AF coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic or noncoupled at temperatures lower than 77 K. We consider that the FeSi₂ layers act as semiconductors and their change in the electric state for the temperature induces the interlayer coupling switching.

Original language	English
Pages (from-to)	323-328
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	2
DOIs	https://doi.org/10.1002/pssa.201330116
Publication status	Published - Feb 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201330116

Cite this

@article{0ef771f96a3841ac87941c1e63c78f5b,

title = "Temperature-dependent interlayer coupling in Fe3Si/FeSi 2 artificial lattices",

abstract = "Fe3Si/FeSi2 artificial lattices, wherein ferromagnetic (F)/antiferromagnetic (AF) interlayer coupling between the Fe 3Si layers were induced by controlling the thickness of FeSi 2 layers, were prepared on Si(111) substrates by facing targets direct-current sputtering. The interlayer couplings were investigated at different temperatures by measuring the magnetization curves. The AF coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic or noncoupled at temperatures lower than 77 K. We consider that the FeSi2 layers act as semiconductors and their change in the electric state for the temperature induces the interlayer coupling switching.",

author = "Sakai, {Ken Ichiro} and Yuta Noda and Daiki Tsumagari and Hiroyuki Deguchi and Kaoru Takeda and Tsuyoshi Yoshitake",

year = "2014",

month = feb,

doi = "10.1002/pssa.201330116",

language = "English",

volume = "211",

pages = "323--328",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Temperature-dependent interlayer coupling in Fe3Si/FeSi 2 artificial lattices

AU - Sakai, Ken Ichiro

AU - Noda, Yuta

AU - Tsumagari, Daiki

AU - Deguchi, Hiroyuki

AU - Takeda, Kaoru

AU - Yoshitake, Tsuyoshi

PY - 2014/2

Y1 - 2014/2

N2 - Fe3Si/FeSi2 artificial lattices, wherein ferromagnetic (F)/antiferromagnetic (AF) interlayer coupling between the Fe 3Si layers were induced by controlling the thickness of FeSi 2 layers, were prepared on Si(111) substrates by facing targets direct-current sputtering. The interlayer couplings were investigated at different temperatures by measuring the magnetization curves. The AF coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic or noncoupled at temperatures lower than 77 K. We consider that the FeSi2 layers act as semiconductors and their change in the electric state for the temperature induces the interlayer coupling switching.

AB - Fe3Si/FeSi2 artificial lattices, wherein ferromagnetic (F)/antiferromagnetic (AF) interlayer coupling between the Fe 3Si layers were induced by controlling the thickness of FeSi 2 layers, were prepared on Si(111) substrates by facing targets direct-current sputtering. The interlayer couplings were investigated at different temperatures by measuring the magnetization curves. The AF coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic or noncoupled at temperatures lower than 77 K. We consider that the FeSi2 layers act as semiconductors and their change in the electric state for the temperature induces the interlayer coupling switching.

UR - http://www.scopus.com/inward/record.url?scp=84894226338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894226338&partnerID=8YFLogxK

U2 - 10.1002/pssa.201330116

DO - 10.1002/pssa.201330116

M3 - Article

AN - SCOPUS:84894226338

SN - 1862-6300

VL - 211

SP - 323

EP - 328

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 2

ER -

Temperature-dependent interlayer coupling in Fe₃Si/FeSi ₂ artificial lattices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this