Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

Nathaporn Promros; Ryuhei Iwasaki; Suguru Funasaki; Kyohei Yamashita; Chen Li; Tsuyoshi Yoshitake

doi:10.4028/www.scientific.net/AMR.858.171

Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi₂/p-type Si heterojunctions fabricated by pulsed laser deposition

Nathaporn Promros
, Ryuhei Iwasaki
, Suguru Funasaki
, Kyohei Yamashita
, Chen Li
, Tsuyoshi Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

n-Type NC-FeSi₂/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi₂ films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 10⁵ Ω at 77 K.

Original language	English
Title of host publication	Frontiers in Materials and Minerals Engineering
Pages	171-176
Number of pages	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.858.171
Publication status	Published - 2014
Event	5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013 - , Malaysia Duration: Jan 22 2013 → Jan 23 2013

Publication series

Name	Advanced Materials Research
Volume	858
ISSN (Print)	1022-6680

Other

Other	5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013
Country/Territory	Malaysia
Period	1/22/13 → 1/23/13

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.4028/www.scientific.net/AMR.858.171

Cite this

Promros, N., Iwasaki, R., Funasaki, S., Yamashita, K., Li, C., & Yoshitake, T. (2014). Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi₂/p-type Si heterojunctions fabricated by pulsed laser deposition. In Frontiers in Materials and Minerals Engineering (pp. 171-176). (Advanced Materials Research; Vol. 858). https://doi.org/10.4028/www.scientific.net/AMR.858.171

Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi₂/p-type Si heterojunctions fabricated by pulsed laser deposition. / Promros, Nathaporn; Iwasaki, Ryuhei; Funasaki, Suguru et al.
Frontiers in Materials and Minerals Engineering. 2014. p. 171-176 (Advanced Materials Research; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Promros, N, Iwasaki, R, Funasaki, S, Yamashita, K, Li, C & Yoshitake, T 2014, Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi₂/p-type Si heterojunctions fabricated by pulsed laser deposition. in Frontiers in Materials and Minerals Engineering. Advanced Materials Research, vol. 858, pp. 171-176, 5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013, Malaysia, 1/22/13. https://doi.org/10.4028/www.scientific.net/AMR.858.171

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title = "Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition",

abstract = "n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.",

author = "Nathaporn Promros and Ryuhei Iwasaki and Suguru Funasaki and Kyohei Yamashita and Chen Li and Tsuyoshi Yoshitake",

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AU - Yamashita, Kyohei

AU - Li, Chen

AU - Yoshitake, Tsuyoshi

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AB - n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

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