Temperature-dependent current-induced magnetization switching in Fe 3Si/FeSi2/Fe3Si trilayered films

Shin Ichi Hirakawa; Takayuki Sonoda; Ken Ichiro Sakai; Kaoru Takeda; Tsuyoshi Yoshitake

doi:10.1143/JJAP.50.08JD06

Temperature-dependent current-induced magnetization switching in Fe ₃Si/FeSi₂/Fe₃Si trilayered films

Shin Ichi Hirakawa, Takayuki Sonoda, Ken Ichiro Sakai, Kaoru Takeda, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Fe₃Si/FeSi₂/Fe₃Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

Original language	English
Article number	08JD06
Journal	Japanese journal of applied physics
Volume	50
Issue number	8 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.08JD06
Publication status	Published - Aug 2011

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.50.08JD06

Cite this

@article{118b7c47a8514750944fbc7822f13586,

title = "Temperature-dependent current-induced magnetization switching in Fe 3Si/FeSi2/Fe3Si trilayered films",

abstract = "Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.",

author = "Hirakawa, {Shin Ichi} and Takayuki Sonoda and Sakai, {Ken Ichiro} and Kaoru Takeda and Tsuyoshi Yoshitake",

year = "2011",

month = aug,

doi = "10.1143/JJAP.50.08JD06",

language = "English",

volume = "50",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "8 PART 2",

}

TY - JOUR

T1 - Temperature-dependent current-induced magnetization switching in Fe 3Si/FeSi2/Fe3Si trilayered films

AU - Hirakawa, Shin Ichi

AU - Sonoda, Takayuki

AU - Sakai, Ken Ichiro

AU - Takeda, Kaoru

AU - Yoshitake, Tsuyoshi

PY - 2011/8

Y1 - 2011/8

N2 - Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

AB - Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

UR - http://www.scopus.com/inward/record.url?scp=80052003631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052003631&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.08JD06

DO - 10.1143/JJAP.50.08JD06

M3 - Article

AN - SCOPUS:80052003631

SN - 0021-4922

VL - 50

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 8 PART 2

M1 - 08JD06

ER -

Temperature-dependent current-induced magnetization switching in Fe ₃Si/FeSi₂/Fe₃Si trilayered films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this