Temperature dependence of single-event burnout for super junction MOSFET

Shunsuke Katoh; Eiji Shimada; Takayuki Yoshihira; Akihiro Oyama; Syotaro Ono; Hideyuki Ura; Gentaro Ookura; Wataru Saito; Yusuke Kawaguchi

doi:10.1109/ISPSD.2015.7123397

Temperature dependence of single-event burnout for super junction MOSFET

Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied the mechanism of the dependence of SEB failure rate on temperature by simulation.

Original language	English
Title of host publication	2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-96
Number of pages	4
ISBN (Electronic)	9781479962594
DOIs	https://doi.org/10.1109/ISPSD.2015.7123397
Publication status	Published - Jun 12 2015
Externally published	Yes
Event	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China Duration: May 10 2015 → May 14 2015

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2015-June
ISSN (Print)	1063-6854

Other

Other	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Country/Territory	China
City	Hong Kong
Period	5/10/15 → 5/14/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2015.7123397

Cite this

Katoh, S., Shimada, E., Yoshihira, T., Oyama, A., Ono, S., Ura, H., Ookura, G., Saito, W., & Kawaguchi, Y. (2015). Temperature dependence of single-event burnout for super junction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 93-96). Article 7123397 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123397

Temperature dependence of single-event burnout for super junction MOSFET. / Katoh, Shunsuke; Shimada, Eiji; Yoshihira, Takayuki et al.
2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 93-96 7123397 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Katoh, S, Shimada, E, Yoshihira, T, Oyama, A, Ono, S, Ura, H, Ookura, G, Saito, W & Kawaguchi, Y 2015, Temperature dependence of single-event burnout for super junction MOSFET. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015., 7123397, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., pp. 93-96, 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Hong Kong, China, 5/10/15. https://doi.org/10.1109/ISPSD.2015.7123397

Katoh S, Shimada E, Yoshihira T, Oyama A, Ono S, Ura H et al. Temperature dependence of single-event burnout for super junction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 93-96. 7123397. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2015.7123397

Katoh, Shunsuke ; Shimada, Eiji ; Yoshihira, Takayuki et al. / Temperature dependence of single-event burnout for super junction MOSFET. 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 93-96 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied the mechanism of the dependence of SEB failure rate on temperature by simulation.",

author = "Shunsuke Katoh and Eiji Shimada and Takayuki Yoshihira and Akihiro Oyama and Syotaro Ono and Hideyuki Ura and Gentaro Ookura and Wataru Saito and Yusuke Kawaguchi",

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AU - Ono, Syotaro

AU - Ura, Hideyuki

AU - Ookura, Gentaro

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AB - Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied the mechanism of the dependence of SEB failure rate on temperature by simulation.

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Temperature dependence of single-event burnout for super junction MOSFET

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