Abstract
TEM characterization was carried out on the epitaxial interface formed by seeded solution growth of 6H-SiC using metal solvents such as Ti and Mn. The penetration of the solution into the micropipes and its solidification behavior were clearly observed. Although stacking faults are introduced in the vicinity of micropipes during the solidification, it decreases as the growth proceeds. The micropipes are terminated by the lateral overgrowth of epitaxial SiC layer. The crystallinity of 6H-SiC obtained from Si-Ti-C solution is much better than that obtained from Si-Mn-C solution.
| Original language | English |
|---|---|
| Pages (from-to) | 347-350 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 457-460 |
| Issue number | I |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering