TEM characterization of Ge precipitates in an Al-1.6 at% Ge alloy

K. Kaneko, K. Inoke, K. Sato, K. Kitawaki, H. Higashida, I. Arslan, P. A. Midgley

    Research output: Contribution to journalArticlepeer-review

    45 Citations (Scopus)

    Abstract

    The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

    Original languageEnglish
    Pages (from-to)210-220
    Number of pages11
    JournalUltramicroscopy
    Volume108
    Issue number3
    DOIs
    Publication statusPublished - Feb 2008

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Instrumentation

    Fingerprint

    Dive into the research topics of 'TEM characterization of Ge precipitates in an Al-1.6 at% Ge alloy'. Together they form a unique fingerprint.

    Cite this