Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor

Soobeom Lee, Hayato Koike, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Naoto Yamashita, Ryo Ohshima, Ei Shigematsu, Yuichiro Ando, Masashi Shiraishi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The spin–orbit interaction (SOI), mainly manifesting itself in heavy elements and compound materials, has been attracting much attention as a means of manipulating and/or converting a spin degree of freedom. Here, we show that a Si metal-oxide- semiconductor (MOS) heterostructure possesses Rashba-type SOI, although Si is a light element and has lattice inversion symmetry resulting in inherently negligible SOI in bulk form. When a strong gate electric field is applied to the Si MOS, we observe spin lifetime anisotropy of propagating spins in the Si through the formation of an emergent effective magnetic field due to the SOI. Furthermore, the Rashba parameter α in the system increases linearly up to 9.8 × 10−16 eV m for a gate electric field of 0.5 V nm−1; that is, it is gate tuneable and the spin splitting of 0.6 μeV is relatively large. Our finding establishes a family of spin–orbit systems.

Original languageEnglish
Pages (from-to)1228-1232
Number of pages5
JournalNature Materials
Issue number9
Publication statusPublished - Sept 2021
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor'. Together they form a unique fingerprint.

Cite this