TY - GEN
T1 - Synthesis of High-Quality 2D Materials for Electronic Applications
AU - Ago, Hiroki
N1 - Funding Information:
This work was supported by JSPS KAKENHI grant numbers JP17K19036 and JP18H03864, JP1922113, JST CREST grant numbers JPMJCR18I1, and JSPS A3 Foresight Program.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - The development of graphene research has opened a new field of atomically thin, two-dimensional (2D) layered materials. They have unique properties, such as high carrier mobility, mechanical flexibility, optical transparency, high thermal conductivity, and high degree of freedom of staking angles. These properties stimulate the research on the applications of 2D materials to electronic and photonic devices. However, for realizing such applications, it is very important to synthesize large-area 2D materials with high crystallinity and low defect density. In this presentation, our recent progress of the chemical vapor deposition (CVD) growth of graphene, transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN) is presented with the emphasis on our original epitaxial growth approach for high-quality films. Moreover, I will also demonstrate our recent work on new types of 2D heterostructures.
AB - The development of graphene research has opened a new field of atomically thin, two-dimensional (2D) layered materials. They have unique properties, such as high carrier mobility, mechanical flexibility, optical transparency, high thermal conductivity, and high degree of freedom of staking angles. These properties stimulate the research on the applications of 2D materials to electronic and photonic devices. However, for realizing such applications, it is very important to synthesize large-area 2D materials with high crystallinity and low defect density. In this presentation, our recent progress of the chemical vapor deposition (CVD) growth of graphene, transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN) is presented with the emphasis on our original epitaxial growth approach for high-quality films. Moreover, I will also demonstrate our recent work on new types of 2D heterostructures.
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U2 - 10.1109/VLSI-TSA48913.2020.9203747
DO - 10.1109/VLSI-TSA48913.2020.9203747
M3 - Conference contribution
AN - SCOPUS:85093683597
T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
SP - 139
EP - 140
BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Y2 - 10 August 2020 through 13 August 2020
ER -