Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi4-xSrxTi3-xNbxO12 thin films by sol-gel method

Hirofumi Matsuda; Takashi Iijima; Hiroshi Uchida; Isao Okada; Takayuki Watanabe; Hiroshi Funakubo

Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi_4-xSr_xTi_3-xNb_xO₁₂ thin films by sol-gel method

Hirofumi Matsuda, Takashi Iijima, Hiroshi Uchida, Isao Okada, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ferroelectric Bi₄Ti₃O₁₂ (BIT) thin films were modified by the substitution of Sr²⁺ ions for Bi³⁺ ions and of Nb⁵⁺ for Ti⁴⁺ (codoping) by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi_4-xSr_xTi_3-xNb_xO₁₂ where x = 0.0, 0.5, 1.0, 1.5). Single-phase thin films were crystallized above 550°C with BIT-type structure. The ferroelectric properties were found, though, with the values of P_r = 10 μC/cm², E_c = 100 kV/cm, ε_r = 300, and tanδ<5% for Bi_3.5Sr_0.5Ti_2.5Nb_0.5O₁₂ (x = 0.5) annealed at 650°C. Perhaps due to the lowering of the Curie temperature with increasing x, the maximum value of ε_r increased.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	688
Publication status	Published - 2002
Externally published	Yes
Event	Ferroelectric Thin Films X - Boston, MA, United States Duration: Nov 25 2001 → Nov 29 2001

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{64aa44031dac4f87bc83878bc14d46f6,

title = "Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi4-xSrxTi3-xNbxO12 thin films by sol-gel method",

abstract = "Ferroelectric Bi4Ti3O12 (BIT) thin films were modified by the substitution of Sr2+ ions for Bi3+ ions and of Nb5+ for Ti4+ (codoping) by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi4-xSrxTi3-xNbxO12 where x = 0.0, 0.5, 1.0, 1.5). Single-phase thin films were crystallized above 550°C with BIT-type structure. The ferroelectric properties were found, though, with the values of Pr = 10 μC/cm2, Ec = 100 kV/cm, εr = 300, and tanδ<5% for Bi3.5Sr0.5Ti2.5Nb0.5O12 (x = 0.5) annealed at 650°C. Perhaps due to the lowering of the Curie temperature with increasing x, the maximum value of εr increased.",

author = "Hirofumi Matsuda and Takashi Iijima and Hiroshi Uchida and Isao Okada and Takayuki Watanabe and Hiroshi Funakubo",

year = "2002",

language = "English",

volume = "688",

pages = "107--111",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films X ; Conference date: 25-11-2001 Through 29-11-2001",

}

TY - JOUR

T1 - Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi4-xSrxTi3-xNbxO12 thin films by sol-gel method

AU - Matsuda, Hirofumi

AU - Iijima, Takashi

AU - Uchida, Hiroshi

AU - Okada, Isao

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

PY - 2002

Y1 - 2002

N2 - Ferroelectric Bi4Ti3O12 (BIT) thin films were modified by the substitution of Sr2+ ions for Bi3+ ions and of Nb5+ for Ti4+ (codoping) by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi4-xSrxTi3-xNbxO12 where x = 0.0, 0.5, 1.0, 1.5). Single-phase thin films were crystallized above 550°C with BIT-type structure. The ferroelectric properties were found, though, with the values of Pr = 10 μC/cm2, Ec = 100 kV/cm, εr = 300, and tanδ<5% for Bi3.5Sr0.5Ti2.5Nb0.5O12 (x = 0.5) annealed at 650°C. Perhaps due to the lowering of the Curie temperature with increasing x, the maximum value of εr increased.

AB - Ferroelectric Bi4Ti3O12 (BIT) thin films were modified by the substitution of Sr2+ ions for Bi3+ ions and of Nb5+ for Ti4+ (codoping) by spin-coating and decomposition of chemical solutions of metal-alkoxide materials (the nominal compositions of Bi4-xSrxTi3-xNbxO12 where x = 0.0, 0.5, 1.0, 1.5). Single-phase thin films were crystallized above 550°C with BIT-type structure. The ferroelectric properties were found, though, with the values of Pr = 10 μC/cm2, Ec = 100 kV/cm, εr = 300, and tanδ<5% for Bi3.5Sr0.5Ti2.5Nb0.5O12 (x = 0.5) annealed at 650°C. Perhaps due to the lowering of the Curie temperature with increasing x, the maximum value of εr increased.

UR - http://www.scopus.com/inward/record.url?scp=0036350294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036350294&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036350294

SN - 0272-9172

VL - 688

SP - 107

EP - 111

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films X

Y2 - 25 November 2001 through 29 November 2001

ER -

Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi_4-xSr_xTi_3-xNb_xO₁₂ thin films by sol-gel method

Abstract

All Science Journal Classification (ASJC) codes

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