Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Takeyasu Saito; Masanori Kameta; Katsuki Kusakabe; Shigeharu Morooka; Hideaki Maeda; Yasunori Hayashi; Tanemasa Asano

doi:10.1143/jjap.37.l543

Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Takeyasu Saito, Masanori Kameta, Katsuki Kusakabe, Shigeharu Morooka, Hideaki Maeda, Yasunori Hayashi, Tanemasa Asano

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH₄ as the carbon source and triethylphosphine (TEP, P(C₂H₅)₃) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm²/(V·s) at 145 K and decreased to 0.15 cm²/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.

Original language	English
Pages (from-to)	L543-L546
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	5 PART A
DOIs	https://doi.org/10.1143/jjap.37.l543
Publication status	Published - May 1 1998

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/jjap.37.l543

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Saito, T., Kameta, M., Kusakabe, K., Morooka, S., Maeda, H., Hayashi, Y., & Asano, T. (1998). Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source. Japanese Journal of Applied Physics, Part 2: Letters, 37(5 PART A), L543-L546. https://doi.org/10.1143/jjap.37.l543

Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source. / Saito, Takeyasu; Kameta, Masanori; Kusakabe, Katsuki et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 5 PART A, 01.05.1998, p. L543-L546.

Research output: Contribution to journal › Article › peer-review

Saito, T, Kameta, M, Kusakabe, K, Morooka, S, Maeda, H, Hayashi, Y & Asano, T 1998, 'Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source', Japanese Journal of Applied Physics, Part 2: Letters, vol. 37, no. 5 PART A, pp. L543-L546. https://doi.org/10.1143/jjap.37.l543

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abstract = "A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source and triethylphosphine (TEP, P(C2H5)3) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm2/(V·s) at 145 K and decreased to 0.15 cm2/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.",

author = "Takeyasu Saito and Masanori Kameta and Katsuki Kusakabe and Shigeharu Morooka and Hideaki Maeda and Yasunori Hayashi and Tanemasa Asano",

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N2 - A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source and triethylphosphine (TEP, P(C2H5)3) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm2/(V·s) at 145 K and decreased to 0.15 cm2/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.

AB - A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source and triethylphosphine (TEP, P(C2H5)3) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm2/(V·s) at 145 K and decreased to 0.15 cm2/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.

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Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Abstract

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