Switching properties of titanium dioxide nanowire memristor

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Keisuke Oka, Annop Klamchuen, Sakon Rahong, Gang Meng, Mati Horprathum, Bo Xu, Fuwei Zhuge, Yong He, Tomoji Kawai

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We present the memristive switching properties in a single nanowire device made of titanium dioxide. We constructed the single oxide nanowire device made of titanium dioxide on a Si substrate. First, we confirmed the existence of memristive switching in a 10 nm scale nanowire device. We successfully extracted the carrier-types for memristive switching by utilizing atmosphere control measurements. Although cobalt oxide and nickel oxide showed the p-type behavior reported previously, the present titanium dioxide nanowire memristor exhibited n-type behavior. Our results highlight the fact that carrier-type of memristive switching seems to be consistent with that of a bulk material, but this is in fact somehow contradictive to a model based on precipitation of metals within an oxide matrix. Since, in conventional capacitor-type memristors, it has been impossible to measure the carrier-type in memristive switching because memristive events are buried within a solid, the open-top planar-type "nanowire memristor" is clearly a powerful device for extracting the intrinsic features of memristive switching phenomena.

Original languageEnglish
Article number11PE09
JournalJapanese journal of applied physics
Issue number11 PART2
Publication statusPublished - Nov 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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