Switching of 3300v scaled igbt by 5v gate drive

T. Hiramoto; K. Satoh; T. Matsudai; W. Saito; K. Kakushima; T. Hoshii; K. Furukawa; M. Watanabe; N. Shigyo; H. Wakabayashi; K. Tsutsui; T. Sarava; H. Iwai; A. Ogura; S. Nishizawa; I. Omura; H. Ohash; K. Itou; T. Takakura; M. Fukui; S. Suzuki; K. Takeuchi; M. Tsukuda; Y. Numasawa

doi:10.1109/ASICON47005.2019.8983633

Switching of 3300v scaled igbt by 5v gate drive

T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, T. Sarava, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash, K. Itou, T. Takakura, M. FukuiS. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

Original language	English
Title of host publication	Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
Editors	Fan Ye, Ting-Ao Tang
Publisher	IEEE Computer Society
ISBN (Electronic)	9781728107356
DOIs	https://doi.org/10.1109/ASICON47005.2019.8983633
Publication status	Published - Oct 2019
Externally published	Yes
Event	13th IEEE International Conference on ASIC, ASICON 2019 - Chongqing, China Duration: Oct 29 2019 → Nov 1 2019

Publication series

Name	Proceedings of International Conference on ASIC
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Conference

Conference	13th IEEE International Conference on ASIC, ASICON 2019
Country/Territory	China
City	Chongqing
Period	10/29/19 → 11/1/19

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ASICON47005.2019.8983633

Cite this

Hiramoto, T., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Sarava, T., Iwai, H., Ogura, A., Nishizawa, S., Omura, I., Ohash, H., Itou, K., Takakura, T., ... Numasawa, Y. (2019). Switching of 3300v scaled igbt by 5v gate drive. In F. Ye, & T-A. Tang (Eds.), Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019 Article 8983633 (Proceedings of International Conference on ASIC). IEEE Computer Society. https://doi.org/10.1109/ASICON47005.2019.8983633

Switching of 3300v scaled igbt by 5v gate drive. / Hiramoto, T.; Satoh, K.; Matsudai, T. et al.
Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019. ed. / Fan Ye; Ting-Ao Tang. IEEE Computer Society, 2019. 8983633 (Proceedings of International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiramoto, T, Satoh, K, Matsudai, T, Saito, W, Kakushima, K, Hoshii, T, Furukawa, K, Watanabe, M, Shigyo, N, Wakabayashi, H, Tsutsui, K, Sarava, T, Iwai, H, Ogura, A, Nishizawa, S, Omura, I, Ohash, H, Itou, K, Takakura, T, Fukui, M, Suzuki, S, Takeuchi, K, Tsukuda, M & Numasawa, Y 2019, Switching of 3300v scaled igbt by 5v gate drive. in F Ye & T-A Tang (eds), Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019., 8983633, Proceedings of International Conference on ASIC, IEEE Computer Society, 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, 10/29/19. https://doi.org/10.1109/ASICON47005.2019.8983633

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title = "Switching of 3300v scaled igbt by 5v gate drive",

abstract = "In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.",

author = "T. Hiramoto and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and T. Sarava and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 13th IEEE International Conference on ASIC, ASICON 2019 ; Conference date: 29-10-2019 Through 01-11-2019",

year = "2019",

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doi = "10.1109/ASICON47005.2019.8983633",

language = "English",

series = "Proceedings of International Conference on ASIC",

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AU - Hiramoto, T.

AU - Satoh, K.

AU - Matsudai, T.

AU - Saito, W.

AU - Kakushima, K.

AU - Hoshii, T.

AU - Furukawa, K.

AU - Watanabe, M.

AU - Shigyo, N.

AU - Wakabayashi, H.

AU - Tsutsui, K.

AU - Sarava, T.

AU - Iwai, H.

AU - Ogura, A.

AU - Nishizawa, S.

AU - Omura, I.

AU - Ohash, H.

AU - Itou, K.

AU - Takakura, T.

AU - Fukui, M.

AU - Suzuki, S.

AU - Takeuchi, K.

AU - Tsukuda, M.

AU - Numasawa, Y.

PY - 2019/10

Y1 - 2019/10

N2 - In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

AB - In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of E-{\mathrm{off}} vs V-{\mathrm{cesat}} relationship by 35% was achieved.

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ER -

Switching of 3300v scaled igbt by 5v gate drive

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