Switching characteristics of MgB2 wires subjected to transient application of magnetic field

K. Higashikawa, T. Nakamura, K. Osamura, M. Takahashi, M. Okada

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We investigated current transport properties in MgB2 wires subjected to transient application of magnetic field, and then discussed their applicability to magnetically controlled switching elements. These wires were fabricated by powder-in-tube (PIT) technique, and Cu-Ni as well as stainless was utilized for their sheath material. A short sample of the wire was installed in a Gifford-McMahon (GM) cryocooler, and was impregnated with solid nitrogen for the sake of thermal stabilization. After stabilizing the temperature of the sample at a certain bias current, the voltage and the temperature in between potential taps were monitored with a transient application of magnetic field. Such measurements were repeated systematically as functions of bias current, operating temperature and magnetic field intensity. It was shown that the sample quickly generated resistance without temperature increment by applying the transient and weak magnetic field. This indicates the applicability of MgB 2 wires to persistent current switches (PCS) with quick response.

Original languageEnglish
Pages (from-to)1261-1266
Number of pages6
JournalPhysica C: Superconductivity and its applications
Issue numberII
Publication statusPublished - 2005
Externally publishedYes
EventProceedings of the 17th Internatioanl Symposium on Superconductivity (ISS 2004) Advances in Superconductivity -
Duration: Nov 23 2004Nov 25 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


Dive into the research topics of 'Switching characteristics of MgB2 wires subjected to transient application of magnetic field'. Together they form a unique fingerprint.

Cite this