TY - GEN
T1 - Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging
AU - Youssef, Amanda
AU - Schon, Jonas
AU - Niewelt, Tim
AU - Mack, Sebastian
AU - Park, Sungeun
AU - Nakajima, Kazuo
AU - Morishita, Kohei
AU - Murai, Ryota
AU - Jensen, Mallory A.
AU - Buonassisi, Tonio
AU - Schubert, Martin C.
N1 - Funding Information:
The authors thank Rebekka Eberle and Georg Diez for helping with calibration measurements. Funding for this work was partly provided by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. This work was partly funded by the German Federal Ministry for Economic Affairs and Energy within the research project “THESSO” under Contract No. 0325491 (THESSO). A. Youssef acknowledges MISTI Germany program for partly funding her stay as a visiting researcher at Fraunhofer ISE. M.A. Jensen acknowledges support by the National Science Foundation Graduate Research Fellowship under Grant No. 1122374.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in «-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.
AB - The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in «-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.
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U2 - 10.1109/PVSC.2017.8366265
DO - 10.1109/PVSC.2017.8366265
M3 - Conference contribution
AN - SCOPUS:85048469956
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 178
EP - 181
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -
