Surface resistance of YBa2Cu3O7-δ thin films on MgO lattice-matched BaZrO3 buffer layers

Masashi Mukaida; Yuya Yamazaki; Yuki Shingai; Sayoko Makino; Masanobu Kusunoki; Atsushi Saito; Shigetoshi Ohshima

doi:10.1088/0953-2048/17/3/007

Surface resistance of YBa₂Cu₃O_7-δ thin films on MgO lattice-matched BaZrO₃ buffer layers

Masashi Mukaida, Yuya Yamazaki, Yuki Shingai, Sayoko Makino, Masanobu Kusunoki, Atsushi Saito, Shigetoshi Ohshima

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The growth and characterization of a BaZrO₃ buffer layer for controlling the in-plane orientation of YBa₂Cu₃O_7-δ films grown on MgO substrates is described. BaZrO₃ buffer layers and YBa₂Cu₃O_7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa₂Cu₃O_7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO₃ buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO₃ buffer layers grown on MgO substrates. YBa₂Cu₃O_7-δ films grown at an optimum growth temperature of 710°C on BaZrO₃ buffer layers on MgO(001) substrates show a lower surface resistance (R_S) than those on MgO(001) substrates without BaZrO₃ buffer layers.

Original language	English
Pages (from-to)	337-341
Number of pages	5
Journal	Superconductor Science and Technology
Volume	17
Issue number	3
DOIs	https://doi.org/10.1088/0953-2048/17/3/007
Publication status	Published - Mar 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/17/3/007

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title = "Surface resistance of YBa2Cu3O7-δ thin films on MgO lattice-matched BaZrO3 buffer layers",

abstract = "The growth and characterization of a BaZrO3 buffer layer for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates is described. BaZrO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa2Cu3O7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO3 buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO3 buffer layers grown on MgO substrates. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance (RS) than those on MgO(001) substrates without BaZrO3 buffer layers.",

author = "Masashi Mukaida and Yuya Yamazaki and Yuki Shingai and Sayoko Makino and Masanobu Kusunoki and Atsushi Saito and Shigetoshi Ohshima",

year = "2004",

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doi = "10.1088/0953-2048/17/3/007",

language = "English",

volume = "17",

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T1 - Surface resistance of YBa2Cu3O7-δ thin films on MgO lattice-matched BaZrO3 buffer layers

AU - Mukaida, Masashi

AU - Yamazaki, Yuya

AU - Shingai, Yuki

AU - Makino, Sayoko

AU - Kusunoki, Masanobu

AU - Saito, Atsushi

AU - Ohshima, Shigetoshi

PY - 2004/3

Y1 - 2004/3

N2 - The growth and characterization of a BaZrO3 buffer layer for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates is described. BaZrO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa2Cu3O7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO3 buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO3 buffer layers grown on MgO substrates. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance (RS) than those on MgO(001) substrates without BaZrO3 buffer layers.

AB - The growth and characterization of a BaZrO3 buffer layer for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates is described. BaZrO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa2Cu3O7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO3 buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO3 buffer layers grown on MgO substrates. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance (RS) than those on MgO(001) substrates without BaZrO3 buffer layers.

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JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

IS - 3

ER -

Surface resistance of YBa₂Cu₃O_7-δ thin films on MgO lattice-matched BaZrO₃ buffer layers

Abstract

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