Surface resistance of YBa2Cu3O7-δ thin films on MgO lattice-matched BaZrO3 buffer layers

Masashi Mukaida, Yuya Yamazaki, Yuki Shingai, Sayoko Makino, Masanobu Kusunoki, Atsushi Saito, Shigetoshi Ohshima

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11 Citations (Scopus)


The growth and characterization of a BaZrO3 buffer layer for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates is described. BaZrO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa2Cu3O7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO3 buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO3 buffer layers grown on MgO substrates. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance (RS) than those on MgO(001) substrates without BaZrO3 buffer layers.

Original languageEnglish
Pages (from-to)337-341
Number of pages5
JournalSuperconductor Science and Technology
Issue number3
Publication statusPublished - Mar 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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