Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs

Fuminobu Hamano, Akira Mizutani, Kaname Imokawa, Daisuke Nakamura, Tetsuya Goto, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Low-temperature poly-Si (LTPS) thin films formed by excimer laser annealing (ELA) are used as the channel material for thin film transistors (TFTs), which have an application as switching devices in flat panel displays. It is well known that one of the major problems in TFT manufacturing is the prominent ridges that form on LTPS thin films after ELA due to volume expansion by crystallization, which in turn induces gate leakage current in the TFTs. In this presentation, we report on the use of additional laser irradiation to reduce the height of the ridges and resulting changes in the electrical properties of LTPS-TFTs.

Original languageEnglish
Title of host publicationLaser-Based Micro- and Nanoprocessing XIV
EditorsUdo Klotzbach, Akira Watanabe, Rainer Kling
ISBN (Electronic)9781510632998
Publication statusPublished - 2020
EventLaser-Based Micro- and Nanoprocessing XIV 2020 - San Francisco, United States
Duration: Feb 3 2020Feb 6 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceLaser-Based Micro- and Nanoprocessing XIV 2020
Country/TerritoryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs'. Together they form a unique fingerprint.

Cite this