@inproceedings{a711661d532b43f59efb551021168d74,
title = "Surface activated bonding of LiNbO3 and GaN at room temperature",
abstract = "In this study, we report room-temperature wafer bonding of a GaN and a LiNbO3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1 × 1 mm2 dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.",
author = "R. Takigawa and E. Higurashi and T. Asano",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
year = "2018",
doi = "10.1149/08605.0207ecst",
language = "English",
isbn = "9781510871656",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "207--213",
editor = "C.S. Tan and T. Suga and H. Baumgart and F. Fournel and M. Goorsky and K.D. Hobart and R. Knechtel",
booktitle = "ECS Transactions",
edition = "5",
}