Surface Activated Bonding of ALD Al2O3films

Junsha Wang, Ryo Takigawa, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

Original languageEnglish
Title of host publication2022 IEEE CPMT Symposium Japan, ICSJ 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781665486132
Publication statusPublished - 2022
Event11th IEEE CPMT Symposium Japan, ICSJ 2022 - Kyoto, Japan
Duration: Nov 9 2022Nov 11 2022

Publication series

Name2022 IEEE CPMT Symposium Japan, ICSJ 2022


Conference11th IEEE CPMT Symposium Japan, ICSJ 2022

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Surface Activated Bonding of ALD Al2O3films'. Together they form a unique fingerprint.

Cite this