Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers

Toshinori Matsushima; Chihaya Adachi

doi:10.1063/1.2844891

Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers

Toshinori Matsushima, Chihaya Adachi

Functional Materials Chemistry

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p - and n -type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA cm2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.

Original language	English
Article number	063306
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2844891
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2844891

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title = "Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers",

abstract = "We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p - and n -type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA cm2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.",

author = "Toshinori Matsushima and Chihaya Adachi",

note = "Funding Information: The present work was partly supported by a Grant-in-Aid for the Global COE Program, “Science for Future Molecular Systems” from the Ministry of Education, Culture, Science, Sports and Technology of Japan.",

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T1 - Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers

AU - Matsushima, Toshinori

AU - Adachi, Chihaya

N1 - Funding Information: The present work was partly supported by a Grant-in-Aid for the Global COE Program, “Science for Future Molecular Systems” from the Ministry of Education, Culture, Science, Sports and Technology of Japan.

PY - 2008

Y1 - 2008

N2 - We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p - and n -type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA cm2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.

AB - We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p - and n -type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA cm2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.

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Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers

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