Superconducting junctions using AlGaAs/GaAs heterostructures with high Hc2 NbN electrodes

Hideaki Takayanagi; Tatsushi Akazaki; Minoru Kawamura; Yuichi Harada; Junsaku Nitta

doi:10.1016/S1386-9477(01)00410-6

Superconducting junctions using AlGaAs/GaAs heterostructures with high H_c2 NbN electrodes

Hideaki Takayanagi, Tatsushi Akazaki, Minoru Kawamura, Yuichi Harada, Junsaku Nitta

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We investigated a superconductor-semiconductor-superconductor junction formed by two superconducting NbN electrodes and a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. We obtained a good ohmic contact between NbN/AuGeNi electrodes and 2DEG by annealing them at 450 °C for 1 min in an N₂ atmosphere. We observed a decrease in the resistance caused by Andreev reflection (AR) within the superconducting energy gap voltage in a zero magnetic field in this structure. We found that the peculiar features of the magnetoresistance in the transition region can be qualitatively explained by considering the existence of the AR in high magnetic fields.

Original language	English
Pages (from-to)	922-926
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00410-6
Publication status	Published - Jan 2002
Externally published	Yes
Event	14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(01)00410-6

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title = "Superconducting junctions using AlGaAs/GaAs heterostructures with high Hc2 NbN electrodes",

abstract = "We investigated a superconductor-semiconductor-superconductor junction formed by two superconducting NbN electrodes and a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. We obtained a good ohmic contact between NbN/AuGeNi electrodes and 2DEG by annealing them at 450 °C for 1 min in an N2 atmosphere. We observed a decrease in the resistance caused by Andreev reflection (AR) within the superconducting energy gap voltage in a zero magnetic field in this structure. We found that the peculiar features of the magnetoresistance in the transition region can be qualitatively explained by considering the existence of the AR in high magnetic fields.",

author = "Hideaki Takayanagi and Tatsushi Akazaki and Minoru Kawamura and Yuichi Harada and Junsaku Nitta",

note = "Funding Information: We thank Dr. H. Nakano for valuable discussions. Furthermore, we thank Dr. S. Ishihara for his encouragement throughout this work. This work was supported in part by the NEDO International Joint Research Grant. ; 14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

year = "2002",

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doi = "10.1016/S1386-9477(01)00410-6",

language = "English",

volume = "12",

pages = "922--926",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Superconducting junctions using AlGaAs/GaAs heterostructures with high Hc2 NbN electrodes

AU - Takayanagi, Hideaki

AU - Akazaki, Tatsushi

AU - Kawamura, Minoru

AU - Harada, Yuichi

AU - Nitta, Junsaku

N1 - Funding Information: We thank Dr. H. Nakano for valuable discussions. Furthermore, we thank Dr. S. Ishihara for his encouragement throughout this work. This work was supported in part by the NEDO International Joint Research Grant.

PY - 2002/1

Y1 - 2002/1

N2 - We investigated a superconductor-semiconductor-superconductor junction formed by two superconducting NbN electrodes and a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. We obtained a good ohmic contact between NbN/AuGeNi electrodes and 2DEG by annealing them at 450 °C for 1 min in an N2 atmosphere. We observed a decrease in the resistance caused by Andreev reflection (AR) within the superconducting energy gap voltage in a zero magnetic field in this structure. We found that the peculiar features of the magnetoresistance in the transition region can be qualitatively explained by considering the existence of the AR in high magnetic fields.

AB - We investigated a superconductor-semiconductor-superconductor junction formed by two superconducting NbN electrodes and a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. We obtained a good ohmic contact between NbN/AuGeNi electrodes and 2DEG by annealing them at 450 °C for 1 min in an N2 atmosphere. We observed a decrease in the resistance caused by Andreev reflection (AR) within the superconducting energy gap voltage in a zero magnetic field in this structure. We found that the peculiar features of the magnetoresistance in the transition region can be qualitatively explained by considering the existence of the AR in high magnetic fields.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035239405&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(01)00410-6

DO - 10.1016/S1386-9477(01)00410-6

M3 - Conference article

AN - SCOPUS:0035239405

SN - 1386-9477

VL - 12

SP - 922

EP - 926

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - 14th International Conference on the

Y2 - 30 July 2001 through 3 August 2001

ER -

Superconducting junctions using AlGaAs/GaAs heterostructures with high H_c2 NbN electrodes

Abstract

All Science Journal Classification (ASJC) codes

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