Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa; Hiroshi Ikenoue; Hiroaki Oizumi; Daisuke Nakamura; Tatsuo Okada

doi:10.1002/sdtp.10828

Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa, Hiroshi Ikenoue, Hiroaki Oizumi, Daisuke Nakamura, Tatsuo Okada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 10¹⁸ cm^-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

Original language	English
Title of host publication	Digest of Technical Papers - SID International Symposium
Publisher	Blackwell Publishing Ltd.
Pages	1206-1209
Number of pages	4
Edition	1
ISBN (Electronic)	9781510832909, 9781510832909, 9781510832909
DOIs	https://doi.org/10.1002/sdtp.10828
Publication status	Published - 2016
Event	54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States Duration: May 22 2016 → May 27 2016

Publication series

Name	Digest of Technical Papers - SID International Symposium
Number	1
Volume	47
ISSN (Print)	0097-966X
ISSN (Electronic)	2168-0159

Conference

Conference	54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016
Country/Territory	United States
City	San Francisco
Period	5/22/16 → 5/27/16

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.10828

Cite this

Suwa, A., Ikenoue, H., Oizumi, H., Nakamura, D., & Okada, T. (2016). Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution. In Digest of Technical Papers - SID International Symposium (1 ed., pp. 1206-1209). (Digest of Technical Papers - SID International Symposium; Vol. 47, No. 1). Blackwell Publishing Ltd.. https://doi.org/10.1002/sdtp.10828

Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution. / Suwa, Akira; Ikenoue, Hiroshi; Oizumi, Hiroaki et al.
Digest of Technical Papers - SID International Symposium. 1. ed. Blackwell Publishing Ltd., 2016. p. 1206-1209 (Digest of Technical Papers - SID International Symposium; Vol. 47, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suwa, A, Ikenoue, H, Oizumi, H, Nakamura, D & Okada, T 2016, Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution. in Digest of Technical Papers - SID International Symposium. 1 edn, Digest of Technical Papers - SID International Symposium, no. 1, vol. 47, Blackwell Publishing Ltd., pp. 1206-1209, 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016, San Francisco, United States, 5/22/16. https://doi.org/10.1002/sdtp.10828

Suwa A, Ikenoue H, Oizumi H, Nakamura D, Okada T. Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution. In Digest of Technical Papers - SID International Symposium. 1 ed. Blackwell Publishing Ltd. 2016. p. 1206-1209. (Digest of Technical Papers - SID International Symposium; 1). doi: 10.1002/sdtp.10828

@inproceedings{1190ff6d91a247e888e0a9a5acbcafdf,

title = "Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution",

abstract = "In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.",

author = "Akira Suwa and Hiroshi Ikenoue and Hiroaki Oizumi and Daisuke Nakamura and Tatsuo Okada",

note = "Publisher Copyright: {\textcopyright} (2016) by SID-the Society for Information Display. All rights reserved.; 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 ; Conference date: 22-05-2016 Through 27-05-2016",

year = "2016",

doi = "10.1002/sdtp.10828",

language = "English",

series = "Digest of Technical Papers - SID International Symposium",

publisher = "Blackwell Publishing Ltd.",

number = "1",

pages = "1206--1209",

booktitle = "Digest of Technical Papers - SID International Symposium",

edition = "1",

}

TY - GEN

T1 - Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

AU - Suwa, Akira

AU - Ikenoue, Hiroshi

AU - Oizumi, Hiroaki

AU - Nakamura, Daisuke

AU - Okada, Tatsuo

PY - 2016

Y1 - 2016

N2 - In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

AB - In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

UR - http://www.scopus.com/inward/record.url?scp=85019077069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019077069&partnerID=8YFLogxK

U2 - 10.1002/sdtp.10828

DO - 10.1002/sdtp.10828

M3 - Conference contribution

AN - SCOPUS:85019077069

T3 - Digest of Technical Papers - SID International Symposium

SP - 1206

EP - 1209

BT - Digest of Technical Papers - SID International Symposium

PB - Blackwell Publishing Ltd.

T2 - 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016

Y2 - 22 May 2016 through 27 May 2016

ER -

Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

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