Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban; Kazuhiro Narashima; Tsuyoshi Yoshitake

doi:10.1143/JJAP.46.7708

Substrate temperature dependence of photovoltaic properties of β-FeSi₂/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban
, Kazuhiro Narashima
, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We fabricated n-type β-FeSi₂/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi₂ films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi₂/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

Original language	English
Pages (from-to)	7708-7710
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.46.7708
Publication status	Published - Dec 6 2007

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.46.7708

Cite this

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abstract = "We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.",

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AU - Shaban, Mahmoud

AU - Narashima, Kazuhiro

AU - Yoshitake, Tsuyoshi

PY - 2007/12/6

Y1 - 2007/12/6

N2 - We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

AB - We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

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