Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban; Kazuhiro Narashima; Tsuyoshi Yoshitake

doi:10.1143/JJAP.46.7708

Substrate temperature dependence of photovoltaic properties of β-FeSi₂/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban, Kazuhiro Narashima, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We fabricated n-type β-FeSi₂/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi₂ films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi₂/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

Original language	English
Pages (from-to)	7708-7710
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.46.7708
Publication status	Published - Dec 6 2007

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.7708

Cite this

Substrate temperature dependence of photovoltaic properties of β-FeSi₂/Si heterojunctions prepared by facing-target DC sputtering. / Shaban, Mahmoud; Narashima, Kazuhiro; Yoshitake, Tsuyoshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 12, 06.12.2007, p. 7708-7710.

Research output: Contribution to journal › Article › peer-review

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