TY - GEN
T1 - Study on innovative plasma fusion CMP and its application to processing of diamond substrate
AU - Nishizawa, Hideaki
AU - Oyama, Koki
AU - Doi, Toshiro K.
AU - Aida, Hideo
AU - Kim, Seongwoo
AU - Sano, Yasuhisa
AU - Kurokawa, Syuhei
AU - Wan, Chengwu
N1 - Funding Information:
This research was supported by a Grant-in-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science (Number 24226005).
Publisher Copyright:
© 2015 American Vacuum Society.
PY - 2016/2/17
Y1 - 2016/2/17
N2 - An innovative planarization system named plasma fusion CMP was developed for aiming to establish a high-efficiency/high-quality polishing process of the hard-to-process materials. In this study, we applied this system to processing of diamond substrate instead of conventional CMP (Chemical Mechanical Polishing) process. We confirmed that stable atmospheric plasma was generated in our dynamic system, and the system worked well even though CMP slurry was applied into the system. In the processing experiments of diamond substrate, plasma fusion CMP achieved 667.7 nm/hr of processing rate while conventional CMP resulted in only 1.9 nm/hr. Furthermore, plasma fusion CMP showed the superior surface roughness reduction of the substrate to CMP.
AB - An innovative planarization system named plasma fusion CMP was developed for aiming to establish a high-efficiency/high-quality polishing process of the hard-to-process materials. In this study, we applied this system to processing of diamond substrate instead of conventional CMP (Chemical Mechanical Polishing) process. We confirmed that stable atmospheric plasma was generated in our dynamic system, and the system worked well even though CMP slurry was applied into the system. In the processing experiments of diamond substrate, plasma fusion CMP achieved 667.7 nm/hr of processing rate while conventional CMP resulted in only 1.9 nm/hr. Furthermore, plasma fusion CMP showed the superior surface roughness reduction of the substrate to CMP.
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M3 - Conference contribution
AN - SCOPUS:84964412433
T3 - 2015 International Conference on Planarization/CMP Technology, ICPT 2015
BT - 2015 International Conference on Planarization/CMP Technology, ICPT 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Conference on Planarization/CMP Technology, ICPT 2015
Y2 - 30 September 2015 through 2 October 2015
ER -