TY - JOUR
T1 - Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy
AU - Ishiura, Ryo
AU - Fujii, Akihiko
AU - Arita, Makoto
AU - Sudoh, Koichi
AU - Ozaki, Masanori
N1 - Funding Information:
This work was partially supported by the JSPS KAKENHI Grant Numbers 17K18882 and 18H04514 , and the JSPS Core-to-Core Program A., Advanced Research Networks.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/3
Y1 - 2020/3
N2 - Surface potential of a solution-processed thin film of an organic semiconductor, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), on n-type silicon (n-Si) substrate has been studied by using Kelvin probe force microscopy, and discussed the interface properties of organic/inorganic semiconductors. The molecular step and terrace structure was observed on the surface of solution-processed C6PcH2 thin film as a feature of the crystallites composed of C6PcH2 columns lying on the substrate. The surface potential changed depending on the distance from the interface, and exceeded 0.4 eV, which indicated the difference of Fermi levels between C6PcH2 and n-Si. The linear and non-linear relationships between the surface potential and the distance from the interface were discussed by taking the vacuum level shift and impurity carriers into consideration.
AB - Surface potential of a solution-processed thin film of an organic semiconductor, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), on n-type silicon (n-Si) substrate has been studied by using Kelvin probe force microscopy, and discussed the interface properties of organic/inorganic semiconductors. The molecular step and terrace structure was observed on the surface of solution-processed C6PcH2 thin film as a feature of the crystallites composed of C6PcH2 columns lying on the substrate. The surface potential changed depending on the distance from the interface, and exceeded 0.4 eV, which indicated the difference of Fermi levels between C6PcH2 and n-Si. The linear and non-linear relationships between the surface potential and the distance from the interface were discussed by taking the vacuum level shift and impurity carriers into consideration.
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U2 - 10.1016/j.orgel.2019.105599
DO - 10.1016/j.orgel.2019.105599
M3 - Article
AN - SCOPUS:85076712845
SN - 1566-1199
VL - 78
JO - Organic Electronics
JF - Organic Electronics
M1 - 105599
ER -