Study on damages in ion-implanted Si using transient reflecting gratings

Hiroyuki Nishimura; Akira Harata; Tsuguo Sawada

doi:10.2116/analsci.7.Supple_1235

Study on damages in ion-implanted Si using transient reflecting gratings

Hiroyuki Nishimura, Akira Harata, Tsuguo Sawada

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.

Original language	English
Pages (from-to)	1235-1236
Number of pages	2
Journal	analytical sciences
Volume	7
DOIs	https://doi.org/10.2116/analsci.7.Supple_1235
Publication status	Published - Jan 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Analytical Chemistry

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10.2116/analsci.7.Supple_1235

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title = "Study on damages in ion-implanted Si using transient reflecting gratings",

abstract = "The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.",

author = "Hiroyuki Nishimura and Akira Harata and Tsuguo Sawada",

year = "1991",

month = jan,

doi = "10.2116/analsci.7.Supple_1235",

language = "English",

volume = "7",

pages = "1235--1236",

journal = "analytical sciences",

issn = "0910-6340",

publisher = "The Japan Society for Analytical Chemistry",

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T1 - Study on damages in ion-implanted Si using transient reflecting gratings

AU - Nishimura, Hiroyuki

AU - Harata, Akira

AU - Sawada, Tsuguo

PY - 1991/1

Y1 - 1991/1

N2 - The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.

AB - The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.

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U2 - 10.2116/analsci.7.Supple_1235

DO - 10.2116/analsci.7.Supple_1235

M3 - Article

AN - SCOPUS:84996050061

SN - 0910-6340

VL - 7

SP - 1235

EP - 1236

JO - analytical sciences

JF - analytical sciences

ER -

Study on damages in ion-implanted Si using transient reflecting gratings

Abstract

All Science Journal Classification (ASJC) codes

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