Study of theoretical J-V equation for 3-layer OLED device

The theoretical equations for J-V characteristics in a 3-layer organic light emitting diode (OLED) were derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The validity of these equations was confirmed by comparing with the results from the device simulation where the same parameters were employed. The device structure for 3-layer OLED is consisted of electron transport layer (ETL) / hole transport layer (HTL) /hole injection layer (HIL). When obeys hole inter-layer barrier limited, the gradient of sub-threshold region was slowing down due to high hole barrier height for HTL and low hole mobility for HIL . And the SPICE model described by Verilog-A language was created based on the theoretical J-V characteristic equations. And also, we were confirmed that the J-V characteristics of device simulation and Verilog-A model are identical to each other.