A homogeneous Si epitaxial film was developed for the first time at the conventional base vacuum of 5×10-7 Torr and low substrate temperature of 400 °C. The key issue in achieving this was to use a high flux of Si atoms supplied by a sputtering-type electron cyclotron resonance (ECR) plasma. In addition, the use of uniform plasma having high flux and low energy was also very important in this novel method.
|Number of pages
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - May 2000
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films