TY - JOUR
T1 - Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks
AU - Li, Xiuyan
AU - Yajima, Takeaki
AU - Nishimura, Tomonori
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - In this study, what occurs at the SiO2/substrate interface and how Si atoms in SiO2 behave in interfacial SiO2 scavenging in a HfO2 gate stack have been investigated. Since the same scavenging occurs on both Si and SiC substrates, the SiC substrate is used to study the role of the substrate. The characterizations of the SiO2/SiC interface show no Si growth on the substrate and no consumption of the substrate in the SiO2 scavenging. Isotope tracing experiments for a HfO2/SiO2/Si stack further demonstrate that atomic Si is generated in scavenging and diffuses out through the HfO2 layer. On the basis of these findings, the reaction at the SiO2/substrate interface is thermodynamically discussed.
AB - In this study, what occurs at the SiO2/substrate interface and how Si atoms in SiO2 behave in interfacial SiO2 scavenging in a HfO2 gate stack have been investigated. Since the same scavenging occurs on both Si and SiC substrates, the SiC substrate is used to study the role of the substrate. The characterizations of the SiO2/SiC interface show no Si growth on the substrate and no consumption of the substrate in the SiO2 scavenging. Isotope tracing experiments for a HfO2/SiO2/Si stack further demonstrate that atomic Si is generated in scavenging and diffuses out through the HfO2 layer. On the basis of these findings, the reaction at the SiO2/substrate interface is thermodynamically discussed.
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U2 - 10.7567/APEX.8.061304
DO - 10.7567/APEX.8.061304
M3 - Article
AN - SCOPUS:84930714100
SN - 1882-0778
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 061304
ER -