Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Yoshihiro Kangawa; Norihito Kawaguchi; Ken Nosuke Hida; Yoshinao Kumagai; Akinori Koukitu

doi:10.1143/JJAP.43.L1026

Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Yoshihiro Kangawa, Norihito Kawaguchi, Ken Nosuke Hida, Yoshinao Kumagai, Akinori Koukitu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.

Original language	English
Pages (from-to)	L1026-L1028
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.43.L1026
Publication status	Published - Aug 1 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/JJAP.43.L1026

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title = "Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction",

abstract = "The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.",

author = "Yoshihiro Kangawa and Norihito Kawaguchi and Hida, {Ken Nosuke} and Yoshinao Kumagai and Akinori Koukitu",

year = "2004",

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doi = "10.1143/JJAP.43.L1026",

language = "English",

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T1 - Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

AU - Kangawa, Yoshihiro

AU - Kawaguchi, Norihito

AU - Hida, Ken Nosuke

AU - Kumagai, Yoshinao

AU - Koukitu, Akinori

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.

AB - The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.

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SP - L1026-L1028

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 8 A

ER -

Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Abstract

All Science Journal Classification (ASJC) codes

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