Study of contact resistance on organic thin-film transistor with surface treatments

Seung Kyum Kim, Reiji Hattori

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)


    In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO2 substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm2/(V·s) and Ion/Ioff greater than of 106. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    Issue number1
    Publication statusPublished - 2015

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Surfaces, Coatings and Films
    • Management, Monitoring, Policy and Law


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