Study of contact resistance on organic thin-film transistor with surface treatments

Seung Kyum Kim; Reiji Hattori

doi:10.5109/1500421

Study of contact resistance on organic thin-film transistor with surface treatments

Seung Kyum Kim, Reiji Hattori

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO₂ substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm²/(V·s) and I_on/I_off greater than of 10⁶. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Evergreen
Volume	2
Issue number	1
DOIs	https://doi.org/10.5109/1500421
Publication status	Published - 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Surfaces, Coatings and Films
Management, Monitoring, Policy and Law

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10.5109/1500421

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title = "Study of contact resistance on organic thin-film transistor with surface treatments",

abstract = "In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO2 substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm2/(V·s) and Ion/Ioff greater than of 106. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.",

author = "Kim, {Seung Kyum} and Reiji Hattori",

note = "Funding Information: This research was supported by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”. Publisher Copyright: {\textcopyright} 2015, Novel Carbon Resource Sciences. All rights reserved.",

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AU - Kim, Seung Kyum

AU - Hattori, Reiji

N1 - Funding Information: This research was supported by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”. Publisher Copyright: © 2015, Novel Carbon Resource Sciences. All rights reserved.

PY - 2015

Y1 - 2015

N2 - In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO2 substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm2/(V·s) and Ion/Ioff greater than of 106. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.

AB - In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO2 substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm2/(V·s) and Ion/Ioff greater than of 106. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.

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Study of contact resistance on organic thin-film transistor with surface treatments

Abstract

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