At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).
|Journal De Physique
|Published - Jul 1994
|Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
Duration: Jan 22 1994 → Jan 25 1994
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy