TY - JOUR
T1 - Structure determination of the ordered (√3 × √3)R30° phase of Ni2Si and Ni2Ge surface alloys on Ni(111) via low-energy electron diffraction
AU - Rahman, Md Sazzadur
AU - Nakagawa, Takeshi
AU - Mizuno, Seigi
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Number 15H03677 , and by Adaptable and Seamless Technology Transfer Program through target-driven R&D, JST . The authors would like to thank Enago ( www.enago.jp ) for the English language review.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/8/12
Y1 - 2015/8/12
N2 - Abstract The 3×3R30°structures of 2-D nickel silicide and nickel germanide surface alloys on Ni(111) were investigated using quantitative low-energy electron diffraction analysis. The unit cells of the determined silicide and germanide structures contain two Ni atoms and one Si or Ge atom, corresponding to the chemical compositions Ni2Si and Ni2Ge, respectively. Both the Si and Ge atoms adopt substitutional face-centered cubic hollow sites to sit on the Ni(111) substrates, and the alloy surfaces exhibit a slight corrugation. The NiSi and NiGe distances were 2.44 and 2.56 Å, respectively, and corresponded well to their respective empirical radii. It was also found that the Ni atoms in the second and third layers moved toward the Si or Ge atom sites from their bulk crystal positions. These results indicate rather strong interactions of the Ni atoms with both the Si and Ge atoms at the surface, leading to trapping of the Si and Ge atoms at the substitutional sites without diffusion into the bulk.
AB - Abstract The 3×3R30°structures of 2-D nickel silicide and nickel germanide surface alloys on Ni(111) were investigated using quantitative low-energy electron diffraction analysis. The unit cells of the determined silicide and germanide structures contain two Ni atoms and one Si or Ge atom, corresponding to the chemical compositions Ni2Si and Ni2Ge, respectively. Both the Si and Ge atoms adopt substitutional face-centered cubic hollow sites to sit on the Ni(111) substrates, and the alloy surfaces exhibit a slight corrugation. The NiSi and NiGe distances were 2.44 and 2.56 Å, respectively, and corresponded well to their respective empirical radii. It was also found that the Ni atoms in the second and third layers moved toward the Si or Ge atom sites from their bulk crystal positions. These results indicate rather strong interactions of the Ni atoms with both the Si and Ge atoms at the surface, leading to trapping of the Si and Ge atoms at the substitutional sites without diffusion into the bulk.
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U2 - 10.1016/j.susc.2015.07.024
DO - 10.1016/j.susc.2015.07.024
M3 - Article
AN - SCOPUS:84938850454
SN - 0039-6028
VL - 642
SP - 1
EP - 5
JO - Surface Science
JF - Surface Science
M1 - 20582
ER -