@article{81d5f97be554487ba31d924904e452b4,
title = "Structural Relaxation of Amorphous Silicon Carbide",
abstract = "We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions.",
author = "Manabu Ishimaru and Bae, {In Tae} and Yoshihiko Hirotsu and Syo Matsumura and Sickafus, {Kurt E.}",
note = "Funding Information: We thank J. R. Tesmer, C. J. Wetteland, and J. A. Valdez for their assistance with ion implantations and T. Ohkubo for his development of the computer code for electron diffraction analysis. This work was sponsored by the U.S. Department of Energy (DOE), Office of Basic Sciences, Division of Materials Sciences, and the Center of Excellence (COE) program and Special Coordination Fund for Promoting Science and Technology on “Nanohetero Metallic Materials” from the Science and Technology Agency and a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan.",
year = "2002",
doi = "10.1103/PhysRevLett.89.055502",
language = "English",
volume = "89",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "5",
}