TY - JOUR
T1 - Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics
AU - Fujii, Ichiro
AU - Mitsui, Ryuta
AU - Nakashima, Kouichi
AU - Kumada, Nobuhiro
AU - Shimada, Mikio
AU - Watanabe, Takayuki
AU - Hayashi, Jumpei
AU - Yabuta, Hisato
AU - Kubota, Makoto
AU - Fukui, Tetsuro
AU - Wada, Satoshi
PY - 2011/9
Y1 - 2011/9
N2 - Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.
AB - Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.
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U2 - 10.1143/JJAP.50.09ND07
DO - 10.1143/JJAP.50.09ND07
M3 - Article
AN - SCOPUS:80053085850
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 9 PART 3
M1 - 09ND07
ER -