Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Jun Ichi Kato; Satoru Tanaka; Satoshi Yamada; Ikuo Suemune

doi:10.1063/1.1605791

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Jun Ichi Kato, Satoru Tanaka, Satoshi Yamada, Ikuo Suemune

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.

Original language	English
Pages (from-to)	1569-1571
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.1605791
Publication status	Published - Aug 25 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1605791

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@article{ab4adb87ed7a495b8e7688fe47dc1867,

title = "Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy",

abstract = "A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.",

author = "Kato, {Jun Ichi} and Satoru Tanaka and Satoshi Yamada and Ikuo Suemune",

year = "2003",

month = aug,

day = "25",

doi = "10.1063/1.1605791",

language = "English",

volume = "83",

pages = "1569--1571",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

AU - Kato, Jun Ichi

AU - Tanaka, Satoru

AU - Yamada, Satoshi

AU - Suemune, Ikuo

PY - 2003/8/25

Y1 - 2003/8/25

N2 - A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.

AB - A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0042782824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042782824&partnerID=8YFLogxK

U2 - 10.1063/1.1605791

DO - 10.1063/1.1605791

M3 - Article

AN - SCOPUS:0042782824

SN - 0003-6951

VL - 83

SP - 1569

EP - 1571

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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