Structural and optical characterization of semiconducting TiN nanoparticles thin film

Sakae Tanemura, Lei Miao, Yoichi Kajino, Masaki Tanemura, Shoichi Toh, Kenji Kaneko, Yukimasa Mori

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    We have succeeded in fabricating a thin film consisting of semiconducing TiN nanoparticles soft-landed on a substrate at room temperature using N 2 reactive magnetron sputtering combined with a gas aggregation method. The total film thickness is about 1200nm. Under the optimized experimental parameters for controlling the growth of TiN particles, the average diameter of TiN nanoparticles is 2.54nm and their diameter distribution is from 1.1 to 3.8 nm. X-ray photoelectron spectroscopy (XPS) study reveals that the fabricated semiconducting TiN has N vacancies and/or defects as Ti xN1-x. The average lattice constant of the TiN particulates is estimated as 4.216 Å and contracted by 0.6% from that of bulk TiN, which is presumably caused by the vacancies and/or defects. Spectroscopic ellipsometry (SE) study revealed that the imaginary part of the dielectric constant of the present film shows typical semiconducting behavior and gives the optical band gap of the film as 3.65 eV in direct allowed optical transition mode.

    Original languageEnglish
    Pages (from-to)356-361
    Number of pages6
    JournalJapanese Journal of Applied Physics
    Issue number1
    Publication statusPublished - Jan 10 2007

    All Science Journal Classification (ASJC) codes

    • General Engineering
    • General Physics and Astronomy


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