Structural and dielectric properties of Ba(Ti1-xSnx)O3 thin films

Mitsuo Tsukada, Masashi Mukaida, Shintaro Miyazawa

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22 Citations (Scopus)


Close correlation between the dielectric constant and the degree of preferential (111) orientation is found for Ba(Ti0.85Sn0.15)O3 (BTS15) solid-solution thin films deposited on a Pt/Ti/SiO2/Si(100) substrate by pulsed laser deposition. It is shown that substrate temperature is the principal factor which determines orientation and crystalline quality of the films. Substrate temperatures higher than 700°C are required to achieve (111) orientation with good crystalline quality. BTS15 films with strong (111) orientation have large dielectric constant which reaches 2500 at 22°C. These films exhibit a D-E hysteresis loop, but small remanent polarization of 0.89 μC/cm2 and coercive field of 3.2kV/cm are obtained at 18°C. Films having the composition with lower Sn ratio exhibit larger remanent polarization. Causal relationships among the dominant film orientation, crystalline quality and dielectric constant are discussed.

Original languageEnglish
Pages (from-to)4908-4912
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number9 SUPPL. B
Publication statusPublished - Sept 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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