Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

E. F. Bezerra; V. N. Freire; A. G. Souza Filho; J. Mendes Filho; V. Lemos; Y. Ikoma; F. Watanabe; T. Motooka

doi:10.1063/1.1328763

Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

E. F. Bezerra, V. N. Freire, A. G. Souza Filho, J. Mendes Filho, V. Lemos, Y. Ikoma, F. Watanabe, T. Motooka

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Raman spectra of (3C-SiC)_8-δ/(3C-SiC_0.5Si_0.5) _δ/(Si)_8-δ/(3C-SiC_0.5Si _0.5)_δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm^-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

Original language	English
Pages (from-to)	4316-4318
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	26
DOIs	https://doi.org/10.1063/1.1328763
Publication status	Published - Dec 25 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1328763

Cite this

@article{2f7b3688f3de468f9f92a2390a18e5dd,

title = "Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices",

abstract = "Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.",

author = "Bezerra, {E. F.} and Freire, {V. N.} and {Souza Filho}, {A. G.} and {Mendes Filho}, J. and V. Lemos and Y. Ikoma and F. Watanabe and T. Motooka",

year = "2000",

month = dec,

day = "25",

doi = "10.1063/1.1328763",

language = "English",

volume = "77",

pages = "4316--4318",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

AU - Bezerra, E. F.

AU - Freire, V. N.

AU - Souza Filho, A. G.

AU - Mendes Filho, J.

AU - Lemos, V.

AU - Ikoma, Y.

AU - Watanabe, F.

AU - Motooka, T.

PY - 2000/12/25

Y1 - 2000/12/25

N2 - Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

AB - Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

UR - http://www.scopus.com/inward/record.url?scp=0013054636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013054636&partnerID=8YFLogxK

U2 - 10.1063/1.1328763

DO - 10.1063/1.1328763

M3 - Article

AN - SCOPUS:0013054636

SN - 0003-6951

VL - 77

SP - 4316

EP - 4318

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this