Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

N. Hirashita, T. Numata, T. Tezuka, N. Sugiyama, K. Usuda, T. Irisawa, A. Tanabe, Y. Moriyama, S. Nakaharai, S. Takagi, E. Toyoda, Y. Miyamura

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH 4, GeH 4 and H 2. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.

Original languageEnglish
Article number6.6
Pages (from-to)141-142
Number of pages2
JournalProceedings - IEEE International SOI Conference
Publication statusPublished - 2004
Externally publishedYes
Event2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States
Duration: Oct 4 2004Oct 7 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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