Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

N. Hirashita; T. Numata; T. Tezuka; N. Sugiyama; K. Usuda; T. Irisawa; A. Tanabe; Y. Moriyama; S. Nakaharai; S. Takagi; E. Toyoda; Y. Miyamura

Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

N. Hirashita, T. Numata, T. Tezuka, N. Sugiyama, K. Usuda, T. Irisawa, A. Tanabe, Y. Moriyama, S. Nakaharai, S. Takagi, E. Toyoda, Y. Miyamura

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH ₄, GeH ₄ and H ₂. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.

Original language	English
Article number	6.6
Pages (from-to)	141-142
Number of pages	2
Journal	Proceedings - IEEE International SOI Conference
Publication status	Published - 2004
Externally published	Yes
Event	2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States Duration: Oct 4 2004 → Oct 7 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process",

abstract = "The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH 4, GeH 4 and H 2. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.",

author = "N. Hirashita and T. Numata and T. Tezuka and N. Sugiyama and K. Usuda and T. Irisawa and A. Tanabe and Y. Moriyama and S. Nakaharai and S. Takagi and E. Toyoda and Y. Miyamura",

year = "2004",

language = "English",

pages = "141--142",

journal = "Proceedings - IEEE International SOI Conference",

issn = "1078-621X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE International SOI Conference, Proceedings ; Conference date: 04-10-2004 Through 07-10-2004",

}

TY - JOUR

T1 - Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

AU - Hirashita, N.

AU - Numata, T.

AU - Tezuka, T.

AU - Sugiyama, N.

AU - Usuda, K.

AU - Irisawa, T.

AU - Tanabe, A.

AU - Moriyama, Y.

AU - Nakaharai, S.

AU - Takagi, S.

AU - Toyoda, E.

AU - Miyamura, Y.

PY - 2004

Y1 - 2004

N2 - The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH 4, GeH 4 and H 2. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.

AB - The fabrication of uniform 150 and 200mm strained-Si/SiGe-on-insulator wafers using Ge-condensation process was discussed. The epitaxial growth of both SiGe and Si films were carried out at 600°C in 1 Pa by a mixture of SiH 4, GeH 4 and H 2. The wafer-in-plane uniformity of stress and thickness was within 3% in relative standard deviation. The integration issues associated with crystalline defects like the threading and misfit dislocations in the SOI and SSOI wafers were also elaborated.

UR - http://www.scopus.com/inward/record.url?scp=20144387856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20144387856&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:20144387856

SN - 1078-621X

SP - 141

EP - 142

JO - Proceedings - IEEE International SOI Conference

JF - Proceedings - IEEE International SOI Conference

M1 - 6.6

T2 - 2004 IEEE International SOI Conference, Proceedings

Y2 - 4 October 2004 through 7 October 2004

ER -

Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process

Abstract

All Science Journal Classification (ASJC) codes

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