Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer

Y. Murakami; A. Kenjo; T. Sadoh; T. Yoshitake; M. Itakura; M. Miyao

doi:10.1557/proc-796-v2.9

Strain modulation of β-FeSi₂ by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]_n multi-layer

Y. Murakami, A. Kenjo, T. Sadoh, T. Yoshitake, M. Itakura, M. Miyao

Research output: Contribution to journal › Conference article › peer-review

Abstract

Strain modulation of β-FeSi₂ by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe_0.4Si_0.5Ge _0.1]_n layered structures, the [a-SiGe/β-FeSi _2-xGe_x]_n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi_1.3Ge_0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe_0.4Si_0.5Ge _0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi₂ occurred, and nanocrystals of relaxed β-FeSi₂ and c-Si _0.7Ge_0.3 were formed. These new structures are useful for formation of opto-electrical devices.

Original language	English
Pages (from-to)	57-62
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	796
DOIs	https://doi.org/10.1557/proc-796-v2.9
Publication status	Published - 2003
Event	Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices - Boston, MA, United States Duration: Dec 1 2003 → Dec 3 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-796-v2.9

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@article{b7781a58afd24886adfc09978a7decac,

title = "Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer",

abstract = "Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.",

author = "Y. Murakami and A. Kenjo and T. Sadoh and T. Yoshitake and M. Itakura and M. Miyao",

year = "2003",

doi = "10.1557/proc-796-v2.9",

language = "English",

volume = "796",

pages = "57--62",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices ; Conference date: 01-12-2003 Through 03-12-2003",

}

TY - JOUR

T1 - Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer

AU - Murakami, Y.

AU - Kenjo, A.

AU - Sadoh, T.

AU - Yoshitake, T.

AU - Itakura, M.

AU - Miyao, M.

PY - 2003

Y1 - 2003

N2 - Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

AB - Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

UR - http://www.scopus.com/inward/record.url?scp=2942672674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942672674&partnerID=8YFLogxK

U2 - 10.1557/proc-796-v2.9

DO - 10.1557/proc-796-v2.9

M3 - Conference article

AN - SCOPUS:2942672674

SN - 0272-9172

VL - 796

SP - 57

EP - 62

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices

Y2 - 1 December 2003 through 3 December 2003

ER -

Strain modulation of β-FeSi₂ by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]_n multi-layer

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