TY - JOUR
T1 - Strain in β-FeSi 2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe] n stacked structure
AU - Sadoh, T.
AU - Murakami, Y.
AU - Kenjo, A.
AU - Enokida, T.
AU - Yoshitake, T.
AU - Itakura, M.
AU - Miyao, M.
N1 - Funding Information:
We are very grateful to Dr. Y. Maeda of Kyoto University for valuable discussions, Profs. N. Kuwano and Y. Tomokiyo of Kyushu University for TEM observation, and Dr. T. Enokida of Fukuryo Semicon Engineering for AES measurements. A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science, and Technology of Japan and CREST of Japan Science and Technology Corporation.
PY - 2004/10/15
Y1 - 2004/10/15
N2 - Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.
AB - Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.
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U2 - 10.1016/S0169-4332(04)01007-4
DO - 10.1016/S0169-4332(04)01007-4
M3 - Article
AN - SCOPUS:4644318981
SN - 0169-4332
VL - 237
SP - 146
EP - 149
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -