Status of surface electron/hole layer on oxide ferroelectrics

Yukio Watanabe; Yosuke Urakami; Sigeru Kaku; Daisuke Matsumoto

doi:10.1080/00150190701515824

Status of surface electron/hole layer on oxide ferroelectrics

Yukio Watanabe, Yosuke Urakami, Sigeru Kaku, Daisuke Matsumoto

Condensed Matter Physics

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO₃ single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

Original language	English
Pages (from-to)	13-18
Number of pages	6
Journal	Ferroelectrics
Volume	355
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190701515824
Publication status	Published - 2007
Event	5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan Duration: Sept 3 2006 → Sept 7 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190701515824

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title = "Status of surface electron/hole layer on oxide ferroelectrics",

abstract = "Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.",

author = "Yukio Watanabe and Yosuke Urakami and Sigeru Kaku and Daisuke Matsumoto",

note = "Funding Information: This work is supported by Grants-in-aid for Scientific Research from JSPS No. 16340093 and No. 17651063.; 5th Asian Meeting on Ferroelectricity, AMF-5 ; Conference date: 03-09-2006 Through 07-09-2006",

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T1 - Status of surface electron/hole layer on oxide ferroelectrics

AU - Watanabe, Yukio

AU - Urakami, Yosuke

AU - Kaku, Sigeru

AU - Matsumoto, Daisuke

N1 - Funding Information: This work is supported by Grants-in-aid for Scientific Research from JSPS No. 16340093 and No. 17651063.

PY - 2007

Y1 - 2007

N2 - Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

AB - Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

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U2 - 10.1080/00150190701515824

DO - 10.1080/00150190701515824

M3 - Conference article

AN - SCOPUS:61649101785

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VL - 355

SP - 13

EP - 18

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 1

T2 - 5th Asian Meeting on Ferroelectricity, AMF-5

Y2 - 3 September 2006 through 7 September 2006

ER -

Status of surface electron/hole layer on oxide ferroelectrics

Abstract

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