Status of surface electron/hole layer on oxide ferroelectrics

Yukio Watanabe, Yosuke Urakami, Sigeru Kaku, Daisuke Matsumoto

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)


Backgrounds of studies of ferroelectric surface carrier layer are discussed in view of domain engineering, memory applications and size effects. Experimental evidence that supports the intrinsic surface carrier layer is presented and is discussed. Especially, we show the surface conduction of BaTiO3 single crystals in ultra high vacuum. To our knowledge, we report the first demonstration of the electrically controlled formation of both electron and hole surface conduction layer that are nonvolatile.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
Issue number1 PART 1
Publication statusPublished - 2007
Event5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan
Duration: Sept 3 2006Sept 7 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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